- PII
- S0370274X25050099-1
- DOI
- 10.31857/S0370274X25050099
- Publication type
- Article
- Status
- Published
- Authors
- Volume/ Edition
- Volume 121 / Issue number 9-10
- Pages
- 768-770
- Abstract
- We experimentally investigate magnetoresistance of a single GeTe–Ni junction between the α-GeTe topological semimetal and thick nickel film at room and liquid helium temperatures. For the magnetic field parallel to the junction plane, we demonstrate characteristic spin-valve hysteresis with mirrored differential resistance dV/dI peaks even at room temperature. In contrast, for normal magnetic fields spin-valve effect appears only at low temperatures. From the magnetic field anisotropy, observation of the similar effect for another topological semimetal Cd3As2, and strictly flat dV/dI(H) magnetoresistance curves for the reference GeTe-Au junction, we connect the observed spin-valve effect with the spin-dependent scattering between the spin textures in the topological surface states and the ferromagnetic nickel electrode. For the topological semimetal α-GeTe, room-temperature spin-valve effect allows efficient spin-to-charge conversion even at ambient conditions.
- Keywords
- Date of publication
- 04.11.2025
- Year of publication
- 2025
- Number of purchasers
- 0
- Views
- 36
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